반도체 제조 공정에서 사용되는 중요한 기술로서, 반도체 Wafer 표면에 발생하는 다양한 이물질 또는 오염물질을 제거하는 기술입니다.
다양한 이물질 및 오염물질을 제거하여 깨끗한 표면을 만들어 줌으로써, 반도체 소자의 정확성 및 신뢰성을 보장하며, 제품의 품질을 높이는 역할을 수행합니다.
Target: Metallic Residue, Foreign Matter, Organic Matter Residue
Principle: Physical/Thermal Processing of Focused Laser
All-Surface Scan Processing to Minimize Wafer/Bump Damage
Scan Processing of Recognition of Residue/Foreign Matter Defect Areas
Point Matching and Processing of Foreign Matters
Target: Organic Matter Residue, Byproduct of Laser Processing
Principle : Physical Collision, Thermal Collision Shrinkage/Expansion
Physical Collision and Breakaway between Particles and Compressed Air
Rapid Cooling(-70 ~ 80 ℃) for Shrinking Deformation
800x Expansion of CO2 Particle to Destruct Contaminants
Vaporize Directly at Room Temperature and No Secondary Contamination
Target: Byproduct of Processing, Floating Matter, Gas
Principle : Floating Matter/Gas Flow
Flow Occurrence of Anisotropic Blowing Floating Matter
Isotropic Suction for Preventing Secondary Contamination